symbol 10 sec steady state v ds v gs 20 1 5 17 12 i dm i ar e ar 3.1 1.7 2 .0 1.1 t j , t stg parameter symbol typ max t 10s 31 40 steady state 59 75 steady state r q j l 16 2 4 w 20 c/w r q j a c - 55 to 150 absolute maximum ratings t a =25c unless otherwise noted p d maximum junction-to-lead c c/w t hermal characteristics units maximum junction-to-ambient a c/w maximum junction-to-ambient a units parameter t a =25c t a =70c v v i d gate-source voltage d rain-source voltage 30 power dissipation a t a =25c j unction and storage temperature range t a =70c r epetitive avalanche energy l=0.3mh g mj 8 0 a 50 375 pulsed drain current b avalanche current g continuous drain c urrent a AO4488 30v n-channel mosfet product summary v ds (v) = 30v i d = 20a (v gs = 10v) r ds(on) < 4.6m (v gs = 10v) r ds(on) < 6.4m (v gs = 4.5v) esd protected 100% uis tested 100% rg tested general description the AO4488 uses advanced trench technology to p rovide excellent r ds(on) with low gate charge. t his device is esd protected and it is suitable for use as a load switch or in pwm applications. soic-8 top view bottom view pin1 g d s alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4488 symbol min typ max units bv dss 30 35.5 v 1 t j = 55c 5 i gss 10 v gs(th) 1.0 1.7 2.5 v i d(on) 80 a 3.8 4.6 t j =125c 5.3 6.5 5.2 6.4 g fs 72 s v sd 0.69 1 v i s 3 a c iss 5450 6800 pf c oss 760 pf c rss 540 pf r g 1 1.5 w q g (10v) 84 112 nc q g (4.5v) 42 56 nc q gs 12 nc q gd 21 nc t d(on) 13 ns t r 9.8 ns t d(off) 49 ns t f 16 ns t rr 42 56 ns q rr 31 nc 0 this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. total gate charge v gs =10v, v ds =15v, i d =20a output capacitance turn-on rise time total gate charge gate source charge gate drain charge turn-off delaytime v gs =10v, v ds =15v, r l =0.75 w , r gen =3 w turn-off fall time turn-on delaytime i s = 1a,v gs = 0v v ds = 5v, i d = 20a forward transconductance switching parameters dynamic parameters maximum body-diode continuous current gate resistance v gs =0v, v ds =0v, f=1mhz v gs =0v, v ds =15v, f=1mhz input capacitance m w gate threshold voltage v ds = v gs i d = 250 m a electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions m a i dss r ds(on) body diode reverse recovery time body diode reverse recovery charge i f =20a, di/dt=100a/ m s v gs = 10v, i d = 20a reverse transfer capacitance i f =20a, di/dt=100a/ m s static drain-source on-resistance diode forward voltage v gs = 4.5v, i d = 18a drain-source breakdown voltage on state drain current i d = 250 m a, v gs = 0v v gs = 10v, v ds = 5v v ds = 30v, v gs = 0v v ds = 0v, v gs = 16v zero gate voltage drain current gate-body leakage current a: the value of r q j a is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a = 25c. the v alue in any given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r q j a is the sum of the thermal impedence from junction to lead r q j l and lead to ambient. d . the static characteristics in figures 1 to 6 are obtained using < 300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa c urve provides a single pulse rating. f. the current rating is based on the t 10s thermal resistance rating. g. e ar and i ar ratings are based on low frequency and duty cycles to keep t j =25c. r ev6: nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4488 typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 10 20 30 40 50 60 70 80 0 1 2 3 4 5 v ds (volts) figure 1: on-region characteristics i d (a) 4v 4.5v 10v 3.5v 0 5 10 15 20 25 30 0 1 2 3 4 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v ds = 5v -40c 3 3.5 4 4.5 5 5.5 6 0 4 8 12 16 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w w w w ) v gs = 10v v gs = 4.5v 1e-06 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c -40c 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance 0 2 4 6 8 10 12 14 16 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w w w w ) i d = 20a 25c 125c -40c v gs = 3v v gs = 10v i d = 20a v gs = 4.5v i d = 18a alpha & omega semiconductor, ltd. www.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4488 typical electrical and thermal characteristics i f =-6.5a, di/dt=100a/ m s this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. 0 2 4 6 8 10 0 10 20 30 40 50 60 70 80 90 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 2000 4000 6000 8000 10000 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 1 10 100 1000 1e-04 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction- to-ambient (note e) power (w) 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note e) z q q q q ja normalized transient thermal resistance 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 1ms 100ms s 10s 10 m s dc v ds = 15v i d = 20a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =59c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c alpha & omega semiconductor, ltd. w ww.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
AO4488 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f a r dss 2 e = 1/2 li di/dt i rm r r vdd v dd q = - idt ar a r t rr alpha & omega semiconductor, ltd. w ww.aosmd.com nt?qtu5[pg ?pqls? w w w . w h x p c b . c o m
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